Thin Film Metallization Specifications

Since 1982, Ion Beam Milling has delivered thousands of products to our customers. During the past two and a half decades, we have seen many different metallization schemes, but certain ones stand out. The following charts list the most common metallization schemes requested by our customers. While this list covers the schemes we see most often, we can create a custom scheme to meet your specific requirements. Please contact us for details.

The common schemes listed below all accept the following standard die attach methods:

Epoxies
Au/Ge eutectic
Au/Si eutectic
Au/Sn solder

Ti/Pt/Au

Application Use	Au/Ge and Au/Si eutectic compatibility. Film withstands 450°C process temperatures
Advantages	Very robust film on standard MIC dielectrics
Solderability	Both Au/Sn and Pb/Sn is recommended due to presence of Pt barrier layer
Front Side Metallization	Sputtered Ti 800A – 1000A Sputtered Pt 1000 – 2000A Sputtered Au 3000 – 5000A, Plate 1-6 microns
Back Side Metallization	Same as Front Side

TiW/Au

Application Use	Robust film for MIC requirements
Advantages	Superior (Ti) adhesion to highly polished dielectrics
Solderability	Au/Sn is ideal, Pb/Sn not recommended due to lack of barrier layer
Front Side Metallization	Sputtered TiW 800A – 1000A Sputtered Au 3000 – 5000A, Plate 1.5-6 microns
Back Side Metallization	Same as Front Side

TiW/Ni/Au

Application Use	General Microwave circuit applications without resistors. Upper temperature limit of 300°C
Advantages	Higher frequency performance without (TaN) resistor adhesion layer
Solderability	Both Au/Sn and Pb/Sn is recommended due to presence of Ni barrier layer
Front Side Metallization	Sputtered TiW 800A – 1000A Sputtered Ni 1000-2000A Sputtered Au 3000 – 5000A, Plate 1-6 microns
Back Side Metallization	Same as Front Side

TiW/Cu/Ni/Au

Application Use	Low loss conductor (Cu) for higher current and power requirements. Ideal for low DCR spiral inductors
Advantages	Solderable and Wire-bondable to 300°C
Solderability	Both Au/Sn and Pb/Sn is recommended due to presence of Ni barrier layer
Front Side Metallization	Sputtered TiW 800A – 1000A Sputtered or Plated Cu 1-6 microns Plated Ni 1 – 3 microns Plated Au 1.5-6 microns
Back Side Metallization	Same as Front Side / Alternative Formulation available per Customer requirement

TiW/AU/Cu/Ni/Au

Application Use	High Power/low loss requirements of (Cu) facilitates inductor and transmission line fabrication
Advantages	Primary conductor (Cu) has lower resistivity than Au. Lower cost alternative to thick Au conductors.
Solderability	Both Au/Sn and Pb/Sn is recommended due to presence of Ni barrier layer
Front Side Metallization	Sputtered TiW 800A – 1000A Sputtered Au 3000-5000A Plated Cu 1-6 microns Plated Ni 1 – 3 microns Plated Au 1.5-6 microns
Back Side Metallization	Same as Front Side / Alternative Formulation available per Customer requirement

Ti/ Au

Application Use	Lower cost alternative for Au/Sn eutectic preform requirements.
Advantages	Ti has excellent adhesion to polished quartz
Solderability	Au/Sn is ideal, Pb/Sn not recommended due to lack of barrier layer
Front Side Metallization	Sputtered Ti 800A – 1000A Sputtered Au 3000 – 5000A, Plate 1-6 microns
Back Side Metallization	Same as Front Side

Tan/TiW/Au

Application Use	Standard resistor/resistor network requirements
Advantages	Au/Ge and Au/Si attachment compatible
Solderability	Au/Sn is ideal, Pb/Sn not recommended due to lack of barrier layer
Front Side Metallization	Sputtered Tan (25 – 200 Ohms/Square) Sputtered TiW 800A – 1000A Sputtered Au 3000 – 5000A, Plate 1-6 microns
Back Side Metallization	Sputtered TiW 800A – 1000A Sputtered Au 3000 – 5000A, Plate 1-6 microns

Tan/Ti/Ni/Au

Application Use	RF/Microwave circuits, attenuators, and resistor/resistor network requirements. Wire-bondable (Au) and solderable
Advantages	TaN is passivated and is stable in a high humidity environment
Solderability	Both Au/Sn and Pb/Sn is recommended due to presence of Ni barrier layer
Front Side Metallization	Sputtered Tan (25 – 200 Ohms/Square) Sputtered Ti 800A – 1000A Sputtered Ni 1000-2000A Sputtered Au 3000 – 5000A, Plate 1-6 microns
Back Side Metallization	Sputtered Ti 800A – 1000A Sputtered Ni 1000-2000A Sputtered Au 3000 – 5000A, Plate 1-6 microns